Qaybta Semiconductor Samsung Foundry ayaa ku dhawaaqday inay bilowday wax soo saarka chips 3nm warshadeeda Hwasong. Si ka duwan jiilkii hore, kuwaas oo isticmaalay tignoolajiyada FinFet, Giant Korea hadda waxay isticmaashaa GAA (Gate-All-Around) transistor architecture, taas oo si weyn u kordhisa waxtarka tamarta.
3nm chips oo leh MBCFET (Multi-Bridge-Channel) qaab dhismeedka GAA wuxuu heli doonaa hufnaan tamar sare, iyo waxyaabo kale, iyadoo la dhimayo tamarta sahayda. Samsung sidoo kale waxay u isticmaashaa nanoplate transistor-yada chips-ka semiconductor-ka loogu talagalay chipset-yada casriga ah ee waxqabadka sarreeya.
Sawir qaade
Marka la barbar dhigo tignoolajiyada nanowire, nanoplates leh kanaalo ballaaran ayaa awood u siinaya waxqabad sare iyo hufnaan wanaagsan. Iyadoo la hagaajinayo ballaca nanoplates-ka, macaamiisha Samsung waxay ku habboonaan karaan waxqabadka iyo isticmaalka tamarta baahidooda.
Waxaa laga yaabaa inaad xiisaynayso
Marka la barbardhigo 5nm chips, sida ay sheegtay Samsung, kuwa cusub waxay leeyihiin 23% waxqabad sare, 45% isticmaalka tamarta hoose iyo 16% aag yar. Jiilkooda 2aad waa in ay bixiyaan 30% waxqabad wanaagsan, 50% hufnaan sare iyo 35% aag yar.
"Samsung si degdeg ah ayay u koraysaa markaan sii wadno muujinta hoggaaminta adeegsiga tignoolajiyada soo socda ee wax soo saarka. Waxaan hiigsaneynaa inaan ku sii wadno hogaamintan habka 3nm ee ugu horeeya ee qaab dhismeedka MBCFETTM. Waxaan sii wadi doonaa inaan si firfircoon ugu cusbooneysiinno horumarinta tignoolajiyada tartan leh oo aan abuurno habab caawiya dardargelinta gaaritaanka biseylka tignoolajiyada." Ayuu yidhi Siyoung Choi, madaxa ganacsiga semiconductor ee Samsung.
